Infineon HEXFET P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRPBF

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£11.44

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£13.72

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500 - 980£0.486£9.72
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Packaging Options:
RS Stock No.:
827-4072
Mfr. Part No.:
IRFR5505TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

32 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.39mm

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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