Infineon HEXFET P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-220AB IRF9Z34NPBF

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RS Stock No.:
919-4867
Mfr. Part No.:
IRF9Z34NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Length

10.54mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Width

4.69mm

Height

8.77mm

Forward Diode Voltage

1.6V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 19A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRF9Z34NPBF


This P-channel MOSFET is designed for consistent performance across various electronic applications. With a continuous drain current rating of 19A and a drain-source voltage of 55V, it is suitable for automation and power management in modern electronic systems. Its robust thermal characteristics enable operation in challenging environments.

Features & Benefits


• High current capacity meets significant load requirements
• Maximum power dissipation of 68W improves durability
• Enhancement mode design supports efficient switching performance
• Low gate charge allows for quicker operation
• Effective thermal characteristics ensure stable performance at elevated temperatures
• TO-220AB package offers convenient integration into circuits

Applications


• Suitable for power supply circuits prioritising efficiency
• Perfect for motor control in automation systems
• Appropriate for high-frequency switching scenarios
• Employed in power management systems to enhance performance

What is the maximum temperature for this MOSFET?


It can operate at a maximum temperature of +175 °C while maintaining efficiency and reliability.

How does it handle gate-source voltage variations?


It accommodates a maximum gate-source voltage of ±20V, providing flexibility in circuit design.

What is the significance of its low drain-source resistance?


A maximum drain-source resistance of 100 mΩ increases power efficiency and reduces heat production.

Can it be used in high-frequency applications?


Yes, it supports fast switching due to its low gate charge of 35 nC at 10V.

How is the thermal performance managed in practical applications?


The high power dissipation capacity of 68W aids in effective heat management during operation.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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