Infineon HEXFET Type P-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4867
Mfr. Part No.:: IRF9Z34NPBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

£21.35

(exc. VAT)

£25.60

(inc. VAT)

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In Stock

250 unit(s) ready to ship
Plus 100 unit(s) shipping from 08 January 2026

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Units	Per unit	Per Tube*
50 - 50	£0.427	£21.35
100 - 200	£0.316	£15.80
250 - 450	£0.295	£14.75
500 - 1200	£0.273	£13.65
1250 +	£0.256	£12.80

*price indicative

RS Stock No.:: 919-4867
Mfr. Part No.:: IRF9Z34NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	35nC
	Forward Voltage Vf	-1.6V
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Standards/Approvals	No
	Width	4.69 mm
	Length	10.54mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 35nC
	Forward Voltage Vf -1.6V
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Standards/Approvals No
	Width 4.69 mm
	Length 10.54mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 19A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRF9Z34NPBF

This P-channel MOSFET is designed for consistent performance across various electronic applications. With a continuous drain current rating of 19A and a drain-source voltage of 55V, it is suitable for automation and power management in modern electronic systems. Its robust thermal characteristics enable operation in challenging environments.

Features & Benefits

• High current capacity meets significant load requirements

• Maximum power dissipation of 68W improves durability

• Enhancement mode design supports efficient switching performance

• Low gate charge allows for quicker operation

• Effective thermal characteristics ensure stable performance at elevated temperatures

• TO-220AB package offers convenient integration into circuits

Applications

• Suitable for power supply circuits prioritising efficiency

• Perfect for motor control in automation systems

• Appropriate for high-frequency switching scenarios

• Employed in power management systems to enhance performance

What is the maximum temperature for this MOSFET?

It can operate at a maximum temperature of +175 °C while maintaining efficiency and reliability.

How does it handle gate-source voltage variations?

It accommodates a maximum gate-source voltage of ±20V, providing flexibility in circuit design.

What is the significance of its low drain-source resistance?

A maximum drain-source resistance of 100 mΩ increases power efficiency and reduces heat production.

Can it be used in high-frequency applications?

Yes, it supports fast switching due to its low gate charge of 35 nC at 10V.

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