Infineon HEXFET P-Channel MOSFET, 74 A, 55 V, 3-Pin TO-220AB IRF4905PBF
- RS Stock No.:
- 919-4772
- Mfr. Part No.:
- IRF4905PBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£64.40
(exc. VAT)
£77.30
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 100 unit(s) shipping from 27 October 2025
- Plus 250 unit(s) shipping from 03 November 2025
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.288 | £64.40 |
| 100 - 200 | £1.224 | £61.20 |
| 250 - 450 | £1.172 | £58.60 |
| 500 - 950 | £1.095 | £54.75 |
| 1000 + | £1.031 | £51.55 |
*price indicative
- RS Stock No.:
- 919-4772
- Mfr. Part No.:
- IRF4905PBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 74 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 74 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon HEXFET Series MOSFET, 74A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF4905PBF
Features & Benefits
• Maximum drain-source voltage of 55V enables effective power management
• Low on-resistance of 20mΩ improves energy efficiency
• Designed as an enhancement mode MOSFET for precise control
• Utilises a TO-220AB package for easy mounting and integration
Applications
• Ideal for motor control requiring substantial current management
• Employed in power supplies for streamlined operation
• Suitable for thermal management in high-load environments
• Used in automation systems for dependable switching
How does the low on-resistance benefit circuit design?
What is the significance of using a TO-220AB package?
Can this component handle high-temperature environments?
What kind of applications require this MOSFET's high continuous drain current?
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