Infineon HEXFET P-Channel MOSFET, 12 A, 55 V, 3-Pin TO-220AB IRF9Z24NPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£27.00

(exc. VAT)

£32.50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 550 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50£0.54£27.00
100 - 200£0.383£19.15
250 - 450£0.362£18.10
500 - 1200£0.335£16.75
1250 +£0.308£15.40

*price indicative

RS Stock No.:
919-4858
Mfr. Part No.:
IRF9Z24NPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

8.77mm

COO (Country of Origin):
CN

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 12A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRF9Z24NPBF


This high-performance MOSFET is designed for efficient power management across various applications. With a P-channel configuration, it is well-suited for controlled switching and enhanced current flow. The product plays a crucial role in driving high-power loads, ensuring consistent performance and thermal stability under challenging conditions.

Features & Benefits


• Maximum continuous drain current of 12A
• Maximum drain-source voltage of 55V
• Low RDS(on) of 175mΩ for reduced power loss
• Works with both negative and positive gate-source voltage

Applications


• Used in power management systems for automation
• Employed in switch mode power supplies for electronics
• Beneficial in audio amplifiers for improved performance
• Common in various consumer electronics for efficient energy use

What is the typical gate charge for optimal performance?


The typical gate charge is 19nC at a gate-source voltage of 10V, providing effective switching characteristics.

How does the channel type affect functionality?


As a P-channel MOSFET, it allows for better integration in high-side switching applications, expanding potential usage scenarios in power circuits.

What is the significance of the temperature range?


The operating temperature range from -55°C to +175°C ensures reliability in various environments, making it versatile for different industrial applications.

Can it be used in high-frequency switching applications?


Yes, the combination of low gate charge and resistance makes it appropriate for high-frequency applications, enhancing performance efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links