Infineon HEXFET P-Channel MOSFET, 12 A, 55 V, 3-Pin TO-220AB IRF9Z24NPBF

RS Stock No.:: 541-0799
Distrelec Article No.:: 303-41-312
Mfr. Part No.:: IRF9Z24NPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 12 A, 55 V, 3-Pin TO-220AB IRF9Z24NPBF

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Units	Per unit
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25 - 49	£0.50
50 - 99	£0.47
100 - 249	£0.45
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RS Stock No.:: 541-0799
Distrelec Article No.:: 303-41-312
Mfr. Part No.:: IRF9Z24NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	12 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	175 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	45 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.69mm
	Typical Gate Charge @ Vgs	19 nC @ 10 V
	Length	10.54mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	8.77mm
	Forward Diode Voltage	1.6V

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 12 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 175 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 45 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.69mm
	Typical Gate Charge @ Vgs 19 nC @ 10 V
	Length 10.54mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 8.77mm
	Forward Diode Voltage 1.6V

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 12A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRF9Z24NPBF

This high-performance MOSFET is designed for efficient power management across various applications. With a P-channel configuration, it is well-suited for controlled switching and enhanced current flow. The product plays a crucial role in driving high-power loads, ensuring consistent performance and thermal stability under challenging conditions.

Features & Benefits

• Maximum continuous drain current of 12A
• Maximum drain-source voltage of 55V
• Low RDS(on) of 175mΩ for reduced power loss
• Works with both negative and positive gate-source voltage

Applications

• Used in power management systems for automation
• Employed in switch mode power supplies for electronics
• Beneficial in audio amplifiers for improved performance
• Common in various consumer electronics for efficient energy use

What is the typical gate charge for optimal performance?

The typical gate charge is 19nC at a gate-source voltage of 10V, providing effective switching characteristics.

How does the channel type affect functionality?

As a P-channel MOSFET, it allows for better integration in high-side switching applications, expanding potential usage scenarios in power circuits.

What is the significance of the temperature range?

The operating temperature range from -55°C to +175°C ensures reliability in various environments, making it versatile for different industrial applications.

Can it be used in high-frequency switching applications?

Yes, the combination of low gate charge and resistance makes it appropriate for high-frequency applications, enhancing performance efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.