Infineon HEXFET Type P-Channel MOSFET, -11 A, -55 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 262-6769
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£702.00
(exc. VAT)
£843.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.234 | £702.00 |
*price indicative
- RS Stock No.:
- 262-6769
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -11A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Typical Gate Charge Qg @ Vgs | 12.7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -11A | ||
Maximum Drain Source Voltage Vds -55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Typical Gate Charge Qg @ Vgs 12.7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
Fast switching
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