Infineon HEXFET Silicon N-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK AUIRFR9024NTRL

Subtotal (1 reel of 3000 units)*

£3,420.00

(exc. VAT)

£4,110.00

(inc. VAT)

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RS Stock No.:
222-4615
Mfr. Part No.:
AUIRFR9024NTRL
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.000175 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant

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