Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK IRF4905LPBF

RS Stock No.:: 650-3662
Mfr. Part No.:: IRF4905LPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK IRF4905LPBF

Bulk discount available

Subtotal (1 pack of 5 units)*

£6.85

(exc. VAT)

£8.20

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

15 unit(s) ready to ship
Plus 5 unit(s) shipping from 30 October 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 20	£1.37	£6.85
25 - 45	£1.124	£5.62
50 - 120	£1.054	£5.27
125 - 245	£0.986	£4.93
250 +	£0.904	£4.52

*price indicative

RS Stock No.:: 650-3662
Mfr. Part No.:: IRF4905LPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	70 A
	Maximum Drain Source Voltage	55 V
	Package Type	I2PAK (TO-262)
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	20 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	3.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	180 nC @ 10 V
	Transistor Material	Si
	Width	4.83mm
	Length	10.67mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Height	10.54mm
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 70 A
	Maximum Drain Source Voltage 55 V
	Package Type I2PAK (TO-262)
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 20 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 3.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 180 nC @ 10 V
	Transistor Material Si
	Width 4.83mm
	Length 10.67mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Height 10.54mm
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, -70A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF4905LPBF

This Infineon MOSFET features a P-channel configuration and is capable of handling -70A of continuous drain current with a maximum drain-source voltage of 55V. It is designed for high-performance applications, particularly in electronic circuits that require effective power management and high efficiency. It is suitable for users in the automation and electronics sectors, offering dependable operation in various environments.

Features & Benefits

• Enhanced performance at high temperatures, up to +175°C
• Low RDS(on) for decreased power losses during operation
• Fast switching capabilities to improve efficiency
• Tolerates repetitive avalanche conditions without failure
• Effective gate charge characteristics for better circuit responsiveness

Applications

• Used in power management circuits for energy-efficient devices
• Ideal for brushless DC motor control
• Applicable in automotive electronics for increased reliability
• Suitable for industrial automation systems that require robust components

What type of voltage can be handled during operation?

It can handle a maximum drain-source voltage of 55V, making it suitable for moderate to high voltage applications.

Can this device operate at elevated temperatures?

Yes, it has an operating temperature range of -55°C to +175°C, allowing it to function in extreme conditions.

How does the low RDS(on) benefit circuit design?

The low RDS(on) reduces conduction losses, resulting in enhanced efficiency and lower heat generation in power applications.

Is this component compatible with typical PCB designs?

Yes, it is designed for through-hole mounting, allowing for seamless integration into standard PCB layouts used in various electronic designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.