Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK IRF4905LPBF
- RS Stock No.:
- 650-3662
- Mfr. Part No.:
- IRF4905LPBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£6.85
(exc. VAT)
£8.20
(inc. VAT)
FREE delivery for orders over £50.00
- 15 unit(s) ready to ship
- Plus 5 unit(s) shipping from 30 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 20 | £1.37 | £6.85 |
25 - 45 | £1.124 | £5.62 |
50 - 120 | £1.054 | £5.27 |
125 - 245 | £0.986 | £4.93 |
250 + | £0.904 | £4.52 |
*price indicative
- RS Stock No.:
- 650-3662
- Mfr. Part No.:
- IRF4905LPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 70 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | I2PAK (TO-262) | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 20 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 3.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
Transistor Material | Si | |
Width | 4.83mm | |
Length | 10.67mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Height | 10.54mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 10.54mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon HEXFET Series MOSFET, -70A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF4905LPBF
Features & Benefits
• Low RDS(on) for decreased power losses during operation
• Fast switching capabilities to improve efficiency
• Tolerates repetitive avalanche conditions without failure
• Effective gate charge characteristics for better circuit responsiveness
Applications
• Ideal for brushless DC motor control
• Applicable in automotive electronics for increased reliability
• Suitable for industrial automation systems that require robust components
What type of voltage can be handled during operation?
Can this device operate at elevated temperatures?
How does the low RDS(on) benefit circuit design?
Is this component compatible with typical PCB designs?
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