Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-262 IRF4905LPBF
- RS Stock No.:
- 650-3662
- Distrelec Article No.:
- 304-29-285
- Mfr. Part No.:
- IRF4905LPBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£7.20
(exc. VAT)
£8.65
(inc. VAT)
FREE delivery for orders over £50.00
- 5 unit(s) ready to ship
- Plus 5 unit(s) shipping from 16 February 2026
- Plus 1,000 unit(s) shipping from 20 May 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.44 | £7.20 |
| 25 - 45 | £1.182 | £5.91 |
| 50 - 120 | £1.108 | £5.54 |
| 125 - 245 | £1.036 | £5.18 |
| 250 + | £0.95 | £4.75 |
*price indicative
- RS Stock No.:
- 650-3662
- Distrelec Article No.:
- 304-29-285
- Mfr. Part No.:
- IRF4905LPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Power Dissipation Pd | 3.8W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 10.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Power Dissipation Pd 3.8W | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 10.54mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, -70A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF4905LPBF
Features & Benefits
Applications
What type of voltage can be handled during operation?
Can this device operate at elevated temperatures?
How does the low RDS(on) benefit circuit design?
Is this component compatible with typical PCB designs?
What are the gate threshold voltage values for this MOSFET?
Related links
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