Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK IRF4905LPBF
- RS Stock No.:
- 650-3662
- Mfr. Part No.:
- IRF4905LPBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£6.85
(exc. VAT)
£8.20
(inc. VAT)
FREE delivery for orders over £50.00
- 15 unit(s) ready to ship
- Plus 30 unit(s) shipping from 08 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 20 | £1.37 | £6.85 |
25 - 45 | £1.124 | £5.62 |
50 - 120 | £1.054 | £5.27 |
125 - 245 | £0.986 | £4.93 |
250 + | £0.904 | £4.52 |
*price indicative
- RS Stock No.:
- 650-3662
- Mfr. Part No.:
- IRF4905LPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 70 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | I2PAK (TO-262) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 20 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 3.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.83mm | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Height | 10.54mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 10.54mm | ||
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