Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin I2PAK IRF3205ZLPBF

View all MOSFETs

Subtotal (1 tube of 50 units)*

£22.60

(exc. VAT)

£27.10

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 5,250 unit(s), ready to ship
Units
Per unit
Per Tube*
50 +£0.452£22.60

*price indicative

RS Stock No.:
214-4447
Mfr. Part No.:
IRF3205ZLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

55 V

Package Type

I2PAK (TO-262)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0065 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche

It is lead-free

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links