Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK IRF3205STRLPBF
- RS Stock No.:
- 831-2809
- Mfr. Part No.:
- IRF3205STRLPBF
- Brand:
- Infineon
Save 35% when you buy 500 units
Subtotal (1 pack of 10 units)*
£11.97
(exc. VAT)
£14.36
(inc. VAT)
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In Stock
- 230 unit(s) ready to ship
- Plus 20 unit(s) ready to ship from another location
- Plus 50 unit(s) shipping from 09 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.197 | £11.97 |
| 50 - 90 | £0.946 | £9.46 |
| 100 - 240 | £0.886 | £8.86 |
| 250 - 490 | £0.827 | £8.27 |
| 500 + | £0.767 | £7.67 |
*price indicative
- RS Stock No.:
- 831-2809
- Mfr. Part No.:
- IRF3205STRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 146 nC @ 10 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 146 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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