Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK IRF3205STRLPBF
- RS Stock No.:
- 831-2809
- Mfr. Part No.:
- IRF3205STRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£11.97
(exc. VAT)
£14.36
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 200 unit(s) ready to ship
- Plus 20 unit(s) ready to ship from another location
- Plus 50 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.197 | £11.97 |
| 50 - 90 | £0.946 | £9.46 |
| 100 - 240 | £0.886 | £8.86 |
| 250 - 490 | £0.827 | £8.27 |
| 500 + | £0.767 | £7.67 |
*price indicative
- RS Stock No.:
- 831-2809
- Mfr. Part No.:
- IRF3205STRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 146 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 146 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Transistor Material Si | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
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