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Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-220AB IRF3205PBF

RS Stock No.:: 540-9783
Distrelec Article No.:: 303-41-274
Mfr. Part No.:: IRF3205PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-220AB IRF3205PBF

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£1.22

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£1.46

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*price indicative

RS Stock No.:: 540-9783
Distrelec Article No.:: 303-41-274
Mfr. Part No.:: IRF3205PBF
Brand:: Infineon

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRF3205PBF

This HEXFET MOSFET is a high-performance power electronics component designed for demanding applications. It features an N-channel configuration with a maximum continuous drain current of 110A and a maximum drain-source voltage of 55V. The TO-220AB package ensures efficient thermal management and is suitable for use in a variety of industrial settings.

Features & Benefits

• Capable of operating at high temperatures up to +175°C
• Offers fast switching characteristics for improved performance
• Excellent avalanche rating for added durability
• Enhancement mode design provides stable operation
• Designed for ease of use in through-hole mounting

Applications

• Used for power conversion in power supplies
• Suitable for motor control
• Utilised in battery management systems
• Applied in high-frequency switching circuits
• Integrated into consumer electronics power systems

What thermal characteristics should be considered for this component?

The thermal resistance from junction-to-case is 0.75°C/W, and the case-to-sink can be as low as 0.50°C/W when applied to a flat, greased surface. This is essential for maintaining optimal performance during high-load scenarios.

How can the specifications influence overall performance?

The low on-resistance and high continuous drain current capability allow for reduced power loss and improved thermal efficiency, leading to enhanced reliability in various applications.

What methods can be applied for effective heat dissipation?

Utilising a heatsink in conjunction with the TO-220AB package can vastly improve heat dissipation during operation, ensuring that the device remains within safe thermal limits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	110 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.69mm
	Typical Gate Charge @ Vgs	146 nC @ 10 V
	Length	10.54mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Forward Diode Voltage	1.3V
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 110 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.69mm
	Typical Gate Charge @ Vgs 146 nC @ 10 V
	Length 10.54mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Forward Diode Voltage 1.3V
	Height 8.77mm
	Minimum Operating Temperature -55 °C

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