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Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC IRFP064NPBF

RS Stock No.:: 541-0008
Distrelec Article No.:: 303-41-342
Mfr. Part No.:: IRFP064NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC IRFP064NPBF

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£1.93

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£2.32

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In Stock

320 unit(s) ready to ship
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Plus 375 unit(s) shipping from 11 September 2025

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Units	Per unit
1 - 4	£1.93
5 - 9	£1.73
10 - 14	£1.64
15 - 19	£1.54
20 +	£1.45

*price indicative

RS Stock No.:: 541-0008
Distrelec Article No.:: 303-41-342
Mfr. Part No.:: IRFP064NPBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP064NPBF

This MOSFET represents a high-performance electronic component designed for efficient power management. It can handle a continuous drain current of 110A and a maximum drain-source voltage of 55V, making it suitable for use in automation, electronics, and electrical industries. The enhancement mode design ensures optimal performance under various conditions, highlighting its role in contemporary electronic systems.

Features & Benefits

• Low on-resistance of 8mΩ enhances efficiency
• Maximum power dissipation of 200W ensures robust operation
• Capable of withstanding operating temperatures up to +175°C
• Versatile, compatible with both negative and positive gate-source voltages
• Single transistor configuration supports a variety of applications

Applications

• Used in power supply circuits that require high efficiency
• Common in motor control systems for automation
• Appropriate for telecommunications equipment
• Effective in power conversion systems in industrial environments

What is the maximum power dissipation for this component?

The maximum power dissipation is 200W, which supports robust performance across diverse applications.

Can it operate in high-temperature environments?

Yes, it is capable of functioning effectively at temperatures up to +175°C, making it suitable for challenging conditions.

What type of gate voltage is required for operation?

This device operates with a maximum gate-source voltage range of -20V to +20V, allowing for flexible control options.

How does the channel type influence its performance?

The N-channel type is beneficial for applications needing efficient switching and high current handling.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	110 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Length	15.9mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	5.3mm
	Typical Gate Charge @ Vgs	170 nC @ 10 V
	Height	20.7mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 110 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Length 15.9mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 5.3mm
	Typical Gate Charge @ Vgs 170 nC @ 10 V
	Height 20.7mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

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