Infineon HEXFET Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK IRF3205ZSTRLPBF

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Subtotal (1 reel of 800 units)*

£545.60

(exc. VAT)

£654.40

(inc. VAT)

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800 - 800£0.682£545.60
1600 +£0.648£518.40

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RS Stock No.:
222-4734
Mfr. Part No.:
IRF3205ZSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0065 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant

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