Infineon HEXFET Type P-Channel MOSFET, 70 A, 55 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 124-8782
- Mfr. Part No.:
- IRF4905STRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£730.40
(exc. VAT)
£876.80
(inc. VAT)
FREE delivery for orders over £50.00
- 14,400 unit(s) ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £0.913 | £730.40 |
| 1600 + | £0.875 | £700.00 |
*price indicative
- RS Stock No.:
- 124-8782
- Mfr. Part No.:
- IRF4905STRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
Infineon HEXFET Series MOSFET, 70A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF4905STRLPBF
Features & Benefits
Applications
What is the maximum temperature this device can operate at?
How does the low RDS(on) benefit circuit design?
Can this component handle pulsed currents?
What are the key parameters for selecting compatible driving voltages?
Is it suitable for high-frequency switching applications?
Related links
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF4905STRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF5305STRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF9Z34NSTRLPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263


