Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF

RS Stock No.:: 831-2819
Mfr. Part No.:: IRF4905STRLPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF

Subtotal (1 pack of 5 units)*

£10.24

(exc. VAT)

£12.29

(inc. VAT)

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In Stock

200 unit(s) ready to ship
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Plus 14,635 unit(s) shipping from 03 November 2025

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Units	Per unit	Per Pack*
5 +	£2.048	£10.24

*price indicative

RS Stock No.:: 831-2819
Mfr. Part No.:: IRF4905STRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	70 A
	Maximum Drain Source Voltage	55 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	20 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	170 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10.67mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	120 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	9.65mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	4.83mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 70 A
	Maximum Drain Source Voltage 55 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 20 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 170 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10.67mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 120 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Width 9.65mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 4.83mm

Infineon HEXFET Series MOSFET, 70A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF4905STRLPBF

This high current MOSFET is suitable for various applications within automation and electronics. With a maximum continuous drain current of 70A, it operates at drain-source voltages up to 55V. Its enhancement mode configuration meets performance requirements, while its low RDS(on) maximises energy efficiency. Designed for high power applications, this MOSFET offers thermal stability, making it appropriate for rigorous operating conditions.

Features & Benefits

• Improves system efficiency through low on-resistance values
• Functions effectively within a temperature range of -55°C to +150°C
• Supports fast switching speeds to enhance performance
• Features robust design for repetitive avalanche conditions
• Provided in a D2PAK TO-263 package for straightforward surface mounting

Applications

• Used in power management systems and converters
• Appropriate for motor control requiring high efficiency
• Integrated into switching power supplies for enhanced performance
• Applicable in automotive environments needing dependable control
• Employed in industrial automation requiring substantial power handling

What is the maximum temperature this device can operate at?

The device has a maximum operating temperature of +150°C, ensuring stability under varying environmental conditions.

How does the low RDS(on) benefit circuit design?

Low RDS(on) minimises conduction losses, enhancing overall circuit efficiency and enabling cooler operation.

Can this component handle pulsed currents?

Yes, it is capable of managing pulsed drain currents up to 280 A, making it suitable for dynamic applications.

What are the key parameters for selecting compatible driving voltages?

The gate-to-source voltage should remain within the range of -20 V to +20 V to guarantee effective operation without risk of damage.

Is it suitable for high-frequency switching applications?

The device is designed for fast switching, making it suitable for high-frequency operational functions in electronic circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.