Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF

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Packaging Options:
RS Stock No.:
831-2819
Mfr. Part No.:
IRF4905STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

120 nC @ 10 V

Transistor Material

Si

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Infineon HEXFET Series MOSFET, 70A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF4905STRLPBF


This high current MOSFET is suitable for various applications within automation and electronics. With a maximum continuous drain current of 70A, it operates at drain-source voltages up to 55V. Its enhancement mode configuration meets performance requirements, while its low RDS(on) maximises energy efficiency. Designed for high power applications, this MOSFET offers thermal stability, making it appropriate for rigorous operating conditions.

Features & Benefits


• Improves system efficiency through low on-resistance values
• Functions effectively within a temperature range of -55°C to +150°C
• Supports fast switching speeds to enhance performance
• Features robust design for repetitive avalanche conditions
• Provided in a D2PAK TO-263 package for straightforward surface mounting

Applications


• Used in power management systems and converters
• Appropriate for motor control requiring high efficiency
• Integrated into switching power supplies for enhanced performance
• Applicable in automotive environments needing dependable control
• Employed in industrial automation requiring substantial power handling

What is the maximum temperature this device can operate at?


The device has a maximum operating temperature of +150°C, ensuring stability under varying environmental conditions.

How does the low RDS(on) benefit circuit design?


Low RDS(on) minimises conduction losses, enhancing overall circuit efficiency and enabling cooler operation.

Can this component handle pulsed currents?


Yes, it is capable of managing pulsed drain currents up to 280 A, making it suitable for dynamic applications.

What are the key parameters for selecting compatible driving voltages?


The gate-to-source voltage should remain within the range of -20 V to +20 V to guarantee effective operation without risk of damage.

Is it suitable for high-frequency switching applications?


The device is designed for fast switching, making it suitable for high-frequency operational functions in electronic circuits.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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