Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF
- RS Stock No.:
- 831-2819
- Mfr. Part No.:
- IRF4905STRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£10.24
(exc. VAT)
£12.29
(inc. VAT)
FREE delivery for orders over £50.00
- 205 unit(s) ready to ship
- Plus 30 unit(s) ready to ship from another location
- Plus 14,635 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 + | £2.048 | £10.24 |
*price indicative
- RS Stock No.:
- 831-2819
- Mfr. Part No.:
- IRF4905STRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 70 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 20 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 170 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
Transistor Material | Si | |
Width | 9.65mm | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 170 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Transistor Material Si | ||
Width 9.65mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Infineon HEXFET Series MOSFET, 70A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF4905STRLPBF
Features & Benefits
• Functions effectively within a temperature range of -55°C to +150°C
• Supports fast switching speeds to enhance performance
• Features robust design for repetitive avalanche conditions
• Provided in a D2PAK TO-263 package for straightforward surface mounting
Applications
• Appropriate for motor control requiring high efficiency
• Integrated into switching power supplies for enhanced performance
• Applicable in automotive environments needing dependable control
• Employed in industrial automation requiring substantial power handling
What is the maximum temperature this device can operate at?
How does the low RDS(on) benefit circuit design?
Can this component handle pulsed currents?
What are the key parameters for selecting compatible driving voltages?
Is it suitable for high-frequency switching applications?
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