Infineon HEXFET P-Channel MOSFET, 38 A, 100 V, 3-Pin D2PAK IRF5210STRLPBF

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Subtotal (1 reel of 800 units)*

£872.80

(exc. VAT)

£1,047.20

(inc. VAT)

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Per Reel*
800 +£1.091£872.80

*price indicative

RS Stock No.:
165-5892
Mfr. Part No.:
IRF5210STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

150 nC @ 10 V

Transistor Material

Si

Length

10.67mm

Maximum Operating Temperature

+150 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

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