P-Channel MOSFET, 38 A, 100 V, 3-Pin D2PAK Infineon IRF5210STRLPBF

RS Stock No.:: 165-5892
Mfr. Part No.:: IRF5210STRLPBF
Brand:: Infineon

P-Channel MOSFET, 38 A, 100 V, 3-Pin D2PAK Infineon IRF5210STRLPBF

3515 In stock - FREE next working day delivery available

Price Each (On a Reel of 800)

£1.18

(exc. VAT)

£1.42

(inc. VAT)

Units	Per unit	Per Reel*
800 +	£1.18	£944.00

*price indicative

RS Stock No.:: 165-5892
Mfr. Part No.:: IRF5210STRLPBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	38 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	170 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Width	9.65mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	150 nC @ 10 V
Height	4.83mm
Minimum Operating Temperature	-55 °C