MPN

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL

RS Stock No.:: 218-2972
Mfr. Part No.:: AUIRF5210STRL
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL

Bulk discount available

Subtotal (1 pack of 5 units)*

£24.45

(exc. VAT)

£29.35

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 100 unit(s), ready to ship

Units	Per unit	Per Pack*
5 - 5	£4.89	£24.45
10 - 20	£4.206	£21.03
25 - 45	£3.912	£19.56
50 - 120	£3.668	£18.34
125 +	£3.374	£16.87

*price indicative

RS Stock No.:: 218-2972
Mfr. Part No.:: AUIRF5210STRL
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3.1W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.6V
	Typical Gate Charge Qg @ Vgs	150nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	9.65 mm
	Height	4.83mm
	Length	10.67mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3.1W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.6V
	Typical Gate Charge Qg @ Vgs 150nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 9.65 mm
	Height 4.83mm
	Length 10.67mm
	Automotive Standard AEC-Q101

Datasheet - AUIRF5210STRL

The Infineon P-channel automotive MOSFET. It is specifically designed for automotive applications. This cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Process Technology

P-Channel MOSFET

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching