Infineon HEXFET P-Channel MOSFET, 23 A, 100 V, 3-Pin D2PAK IRF9540NSTRLPBF
- RS Stock No.:
- 827-3931
- Mfr. Part No.:
- IRF9540NSTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£14.37
(exc. VAT)
£17.24
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 40 unit(s) ready to ship
- Plus 60 unit(s) ready to ship from another location
- Plus 940 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.437 | £14.37 |
| 50 - 90 | £1.365 | £13.65 |
| 100 - 240 | £1.308 | £13.08 |
| 250 - 490 | £1.25 | £12.50 |
| 500 + | £0.79 | £7.90 |
*price indicative
- RS Stock No.:
- 827-3931
- Mfr. Part No.:
- IRF9540NSTRLPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 23 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 117 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 73 nC @ 10 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 117 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 73 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
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