Infineon HEXFET P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB IRF9540NPBF
- RS Stock No.:
- 919-4886
- Mfr. Part No.:
- IRF9540NPBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£43.15
(exc. VAT)
£51.80
(inc. VAT)
FREE delivery for orders over £50.00
- 350 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.863 | £43.15 |
100 - 200 | £0.638 | £31.90 |
250 - 450 | £0.604 | £30.20 |
500 - 950 | £0.561 | £28.05 |
1000 + | £0.518 | £25.90 |
*price indicative
- RS Stock No.:
- 919-4886
- Mfr. Part No.:
- IRF9540NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 23 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 117 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 140 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 97 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Height | 8.77mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 117 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 97 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF9540NPBF
Features & Benefits
• Maximum drain-source voltage of 100V for consistent operation
• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency
• Capable of power dissipation up to 140W for intensive applications
• Typical gate charge of 97 nC at 10V supports fast switching
Applications
• Used in motor control systems for accurate speed regulation
• Integrated into power supply circuits to improve operational reliability
• Utilised in various automation systems for effective control functions
What is the temperature range for optimal performance?
How does the gate threshold voltage affect operation?
What type of mounting is required for installation?
Can this MOSFET be used in high-frequency applications?
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