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Infineon HEXFET P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB IRF9540NPBF

RS Stock No.:: 919-4886
Mfr. Part No.:: IRF9540NPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB IRF9540NPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£41.20

(exc. VAT)

£49.45

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

350 unit(s) ready to ship

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Units	Per unit	Per Tube*
50 - 50	£0.824	£41.20
100 - 200	£0.61	£30.50
250 - 450	£0.577	£28.85
500 - 950	£0.536	£26.80
1000 +	£0.494	£24.70

*price indicative

RS Stock No.:: 919-4886
Mfr. Part No.:: IRF9540NPBF
Brand:: Infineon

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF9540NPBF

This P-channel MOSFET is intended for high-performance applications across electronics and automation sectors. It supports a maximum continuous drain current of 23A and a drain-source voltage of 100 V, enhancing circuit efficiency. The enhancement mode configuration allows for accurate control of the output, making it suitable for various industries, including electrical and mechanical applications.

Features & Benefits

• Handles up to 23A continuous drain current for robust performance
• Maximum drain-source voltage of 100V for consistent operation
• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency
• Capable of power dissipation up to 140W for intensive applications
• Typical gate charge of 97 nC at 10V supports fast switching

Applications

• Employed in power management circuits for efficient energy conversion
• Used in motor control systems for accurate speed regulation
• Integrated into power supply circuits to improve operational reliability
• Utilised in various automation systems for effective control functions

What is the temperature range for optimal performance?

The operating temperature range spans from -55°C to +175°C, allowing for effective use in diverse environmental conditions.

How does the gate threshold voltage affect operation?

The gate threshold voltage varies between 2V and 4V, ensuring reliable activation and smooth operation in response to control signals.

What type of mounting is required for installation?

This MOSFET is designed for through-hole mounting, facilitating integration into different electronic assemblies.

Can this MOSFET be used in high-frequency applications?

Yes, it is suitable for high-frequency switching applications due to its low gate charge and rapid switching capabilities.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	23 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	117 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	140 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	97 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 23 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 117 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 140 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 97 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Height 8.77mm
	Minimum Operating Temperature -55 °C

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