Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-220

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£22.60

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£27.10

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50 - 50£0.452£22.60
100 - 200£0.429£21.45
250 - 450£0.411£20.55
500 - 1200£0.384£19.20
1250 +£0.362£18.10

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RS Stock No.:
919-4860
Mfr. Part No.:
IRF9530NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

200mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

79W

Forward Voltage Vf

-1.6V

Typical Gate Charge Qg @ Vgs

58nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.54mm

Width

4.69 mm

Height

8.77mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF


This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency.

Features & Benefits


• Maximum continuous drain current of 14A for robust performance

• Compatible with drain-source voltages of up to 100V for versatility

• Low on-resistance of 200mΩ enhances power efficiency

• TO-220AB package design facilitates easy mounting and heat dissipation

• Enhancement mode operation ensures dependable switching performance

• High gate threshold voltage of 4V allows for effective control

Applications


• Suitable for integration into power supply circuits

• Utilised in motor control systems for improved efficiency

• Applicable in power converters for enhanced energy management

• Ideal for power switching in electronic devices

• Employed in high current driver circuits for dependability

How can the operating temperature range affect usage?


The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance.

What are the implications of the maximum power dissipation specification?


With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings.

Can it be used in parallel configurations for increased current capacity?


Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed.

What precautions should be taken during installation?


Proper heat sinking is essential to prevent overheating; it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability.

How does device selection impact overall circuit performance?


Choosing the appropriate specifications improves circuit efficiency, reducing power losses and enhancing overall system performance, especially in high-demand applications.

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