MPN

Infineon HEXFET P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF9530NPBF

RS Stock No.:: 919-4860
Mfr. Part No.:: IRF9530NPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF9530NPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£19.10

(exc. VAT)

£22.90

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

250 unit(s) ready to ship
Plus 200 unit(s) ready to ship from another location
Plus 15,200 unit(s) shipping from 12 September 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£0.382	£19.10
100 - 200	£0.363	£18.15
250 - 450	£0.348	£17.40
500 - 1200	£0.325	£16.25
1250 +	£0.306	£15.30

*price indicative

RS Stock No.:: 919-4860
Mfr. Part No.:: IRF9530NPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	14 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	200 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	79 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	58 nC @ 10 V
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 14 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 200 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 79 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 58 nC @ 10 V
	Height 8.77mm
	Minimum Operating Temperature -55 °C

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF

This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency.

Features & Benefits

• Maximum continuous drain current of 14A for robust performance
• Compatible with drain-source voltages of up to 100V for versatility
• Low on-resistance of 200mΩ enhances power efficiency
• TO-220AB package design facilitates easy mounting and heat dissipation
• Enhancement mode operation ensures dependable switching performance
• High gate threshold voltage of 4V allows for effective control

Applications

• Suitable for integration into power supply circuits
• Utilised in motor control systems for improved efficiency
• Applicable in power converters for enhanced energy management
• Ideal for power switching in electronic devices
• Employed in high current driver circuits for dependability

How can the operating temperature range affect usage?

The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance.

What are the implications of the maximum power dissipation specification?

With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings.

Can it be used in parallel configurations for increased current capacity?

Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed.

What precautions should be taken during installation?

Proper heat sinking is essential to prevent overheating

it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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