Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4860
Mfr. Part No.:: IRF9530NPBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£23.45

(exc. VAT)

£28.15

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

750 unit(s) ready to ship
Plus 150 unit(s) ready to ship from another location
Plus 14,200 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Tube*
50 - 50	£0.469	£23.45
100 - 200	£0.446	£22.30
250 - 450	£0.427	£21.35
500 - 1200	£0.399	£19.95
1250 +	£0.375	£18.75

*price indicative

RS Stock No.:: 919-4860
Mfr. Part No.:: IRF9530NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Power Dissipation Pd	79W
	Forward Voltage Vf	-1.6V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	8.77mm
	Width	4.69 mm
	Length	10.54mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Power Dissipation Pd 79W
	Forward Voltage Vf -1.6V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 8.77mm
	Width 4.69 mm
	Length 10.54mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF

This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency.

Features & Benefits

• Maximum continuous drain current of 14A for robust performance

• Compatible with drain-source voltages of up to 100V for versatility

• Low on-resistance of 200mΩ enhances power efficiency

• TO-220AB package design facilitates easy mounting and heat dissipation

• Enhancement mode operation ensures dependable switching performance

• High gate threshold voltage of 4V allows for effective control

Applications

• Suitable for integration into power supply circuits

• Utilised in motor control systems for improved efficiency

• Applicable in power converters for enhanced energy management

• Ideal for power switching in electronic devices

• Employed in high current driver circuits for dependability

How can the operating temperature range affect usage?

The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance.

What are the implications of the maximum power dissipation specification?

With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings.

Can it be used in parallel configurations for increased current capacity?

Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed.

What precautions should be taken during installation?

Proper heat sinking is essential to prevent overheating; it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability.

How does device selection impact overall circuit performance?

Choosing the appropriate specifications improves circuit efficiency, reducing power losses and enhancing overall system performance, especially in high-demand applications.