Infineon HEXFET P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF9530NPBF
- RS Stock No.:
- 919-4860
- Mfr. Part No.:
- IRF9530NPBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£23.45
(exc. VAT)
£28.15
(inc. VAT)
FREE delivery for orders over £50.00
- 1,000 unit(s) ready to ship
- Plus 200 unit(s) ready to ship from another location
- Plus 14,200 unit(s) shipping from 09 October 2025
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.469 | £23.45 |
100 - 200 | £0.446 | £22.30 |
250 - 450 | £0.427 | £21.35 |
500 - 1200 | £0.399 | £19.95 |
1250 + | £0.375 | £18.75 |
*price indicative
- RS Stock No.:
- 919-4860
- Mfr. Part No.:
- IRF9530NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 14 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 200 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 79 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 8.77mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 79 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
- COO (Country of Origin):
- CN
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF
Features & Benefits
• Compatible with drain-source voltages of up to 100V for versatility
• Low on-resistance of 200mΩ enhances power efficiency
• TO-220AB package design facilitates easy mounting and heat dissipation
• Enhancement mode operation ensures dependable switching performance
• High gate threshold voltage of 4V allows for effective control
Applications
• Utilised in motor control systems for improved efficiency
• Applicable in power converters for enhanced energy management
• Ideal for power switching in electronic devices
• Employed in high current driver circuits for dependability
How can the operating temperature range affect usage?
What are the implications of the maximum power dissipation specification?
Can it be used in parallel configurations for increased current capacity?
What precautions should be taken during installation?
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