Infineon HEXFET P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF9530NPBF

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RS Stock No.:
541-0828
Distrelec Article No.:
303-41-309
Mfr. Part No.:
IRF9530NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.54mm

Width

4.69mm

Transistor Material

Si

Typical Gate Charge @ Vgs

58 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

8.77mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF


This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency.

Features & Benefits


• Maximum continuous drain current of 14A for robust performance
• Compatible with drain-source voltages of up to 100V for versatility
• Low on-resistance of 200mΩ enhances power efficiency
• TO-220AB package design facilitates easy mounting and heat dissipation
• Enhancement mode operation ensures dependable switching performance
• High gate threshold voltage of 4V allows for effective control

Applications


• Suitable for integration into power supply circuits
• Utilised in motor control systems for improved efficiency
• Applicable in power converters for enhanced energy management
• Ideal for power switching in electronic devices
• Employed in high current driver circuits for dependability

How can the operating temperature range affect usage?


The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance.

What are the implications of the maximum power dissipation specification?


With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings.

Can it be used in parallel configurations for increased current capacity?


Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed.

What precautions should be taken during installation?


Proper heat sinking is essential to prevent overheating

it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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