Infineon HEXFET P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB IRF5210PBF

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100 - 200£1.193£59.65
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RS Stock No.:
919-4915
Mfr. Part No.:
IRF5210PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.54mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

4.69mm

Height

8.77mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF


This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.

Features & Benefits


• 40A continuous drain current accommodates high-power applications
• 100V maximum drain-source voltage provides operational versatility
• P-channel design simplifies circuit configuration
• Enhancement mode functionality facilitates efficient power management
• High maximum power dissipation capability enhances thermal performance

Applications


• Power switching in industrial automation
• DC-DC converters for efficient power supply
• Motor control circuits for precision
• Peak power handling scenarios in electronics

What is the maximum operating temperature for this component?


The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.

How does the low on-resistance benefit circuit performance?


The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.

Is this suitable for applications in automotive systems?


Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.

What kind of circuit configurations can it be integrated into?


This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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