MPN

Infineon HEXFET P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB IRF5210PBF

RS Stock No.:: 919-4915
Mfr. Part No.:: IRF5210PBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB IRF5210PBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£67.00

(exc. VAT)

£80.50

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

350 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£1.34	£67.00
100 - 200	£1.139	£56.95
250 +	£1.005	£50.25

*price indicative

RS Stock No.:: 919-4915
Mfr. Part No.:: IRF5210PBF
Brand:: Infineon

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF

This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.

Features & Benefits

• 40A continuous drain current accommodates high-power applications
• 100V maximum drain-source voltage provides operational versatility
• P-channel design simplifies circuit configuration
• Enhancement mode functionality facilitates efficient power management
• High maximum power dissipation capability enhances thermal performance

Applications

• Power switching in industrial automation
• DC-DC converters for efficient power supply
• Motor control circuits for precision
• Peak power handling scenarios in electronics

What is the maximum operating temperature for this component?

The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.

How does the low on-resistance benefit circuit performance?

The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.

Is this suitable for applications in automotive systems?

Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.

What kind of circuit configurations can it be integrated into?

This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	40 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.69mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Length	10.54mm
	Typical Gate Charge @ Vgs	180 nC @ 10 V
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 40 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.69mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Length 10.54mm
	Typical Gate Charge @ Vgs 180 nC @ 10 V
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 8.77mm

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