Infineon HEXFET P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB IRF5210PBF
- RS Stock No.:
- 919-4915
- Mfr. Part No.:
- IRF5210PBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£70.15
(exc. VAT)
£84.20
(inc. VAT)
FREE delivery for orders over £50.00
- 350 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £1.403 | £70.15 |
100 - 200 | £1.193 | £59.65 |
250 + | £1.052 | £52.60 |
*price indicative
- RS Stock No.:
- 919-4915
- Mfr. Part No.:
- IRF5210PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 40 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 200 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.54mm | |
Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.69mm | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.69mm | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF
Features & Benefits
• 100V maximum drain-source voltage provides operational versatility
• P-channel design simplifies circuit configuration
• Enhancement mode functionality facilitates efficient power management
• High maximum power dissipation capability enhances thermal performance
Applications
• DC-DC converters for efficient power supply
• Motor control circuits for precision
• Peak power handling scenarios in electronics
What is the maximum operating temperature for this component?
How does the low on-resistance benefit circuit performance?
Is this suitable for applications in automotive systems?
What kind of circuit configurations can it be integrated into?
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