Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4915
Mfr. Part No.:: IRF5210PBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£70.15

(exc. VAT)

£84.20

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

1,000 unit(s) shipping from 26 February 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£1.403	£70.15
100 - 200	£1.193	£59.65
250 +	£1.052	£52.60

*price indicative

RS Stock No.:: 919-4915
Mfr. Part No.:: IRF5210PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.6V
	Typical Gate Charge Qg @ Vgs	180nC
	Maximum Power Dissipation Pd	200W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Height	8.77mm
	Standards/Approvals	No
	Length	10.54mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.6V
	Typical Gate Charge Qg @ Vgs 180nC
	Maximum Power Dissipation Pd 200W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Height 8.77mm
	Standards/Approvals No
	Length 10.54mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF

This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.

Features & Benefits

• 40A continuous drain current accommodates high-power applications

• 100V maximum drain-source voltage provides operational versatility

• P-channel design simplifies circuit configuration

• Enhancement mode functionality facilitates efficient power management

• High maximum power dissipation capability enhances thermal performance

Applications

• Power switching in industrial automation

• DC-DC converters for efficient power supply

• Motor control circuits for precision

• Peak power handling scenarios in electronics

What is the maximum operating temperature for this component?

The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.

How does the low on-resistance benefit circuit performance?

The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.

Is this suitable for applications in automotive systems?

Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.

What kind of circuit configurations can it be integrated into?

This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.

How should it be installed to ensure optimal performance?

Ensure proper thermal contact with a heatsink, and adhere to recommended PCB layout guidelines to enhance performance and reliability.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today