Infineon HEXFET P-Channel MOSFET, 38 A, 100 V, 3-Pin I2PAK IRF5210LPBF
- RS Stock No.:
- 650-3707
- Mfr. Part No.:
- IRF5210LPBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£10.65
(exc. VAT)
£12.80
(inc. VAT)
FREE delivery for orders over £50.00
- 5 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 20 | £2.13 | £10.65 |
25 - 45 | £1.918 | £9.59 |
50 - 120 | £1.79 | £8.95 |
125 - 245 | £1.662 | £8.31 |
250 + | £1.554 | £7.77 |
*price indicative
- RS Stock No.:
- 650-3707
- Mfr. Part No.:
- IRF5210LPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 38 A | |
Maximum Drain Source Voltage | 100 V | |
Series | HEXFET | |
Package Type | I2PAK (TO-262) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 3.1 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
Width | 4.69mm | |
Maximum Operating Temperature | +150 °C | |
Length | 10.54mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Height | 10.54mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 38 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Width 4.69mm | ||
Maximum Operating Temperature +150 °C | ||
Length 10.54mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 10.54mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel Power MOSFET 100V to 150V, Infineon
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