Infineon HEXFET P-Channel MOSFET, 38 A, 100 V, 3-Pin I2PAK IRF5210LPBF
- RS Stock No.:
- 650-3707
- Mfr. Part No.:
- IRF5210LPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.65
(exc. VAT)
£12.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 5 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.13 | £10.65 |
| 25 - 45 | £1.918 | £9.59 |
| 50 - 120 | £1.79 | £8.95 |
| 125 - 245 | £1.662 | £8.31 |
| 250 + | £1.554 | £7.77 |
*price indicative
- RS Stock No.:
- 650-3707
- Mfr. Part No.:
- IRF5210LPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 38 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | I2PAK (TO-262) | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Width | 4.69mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.54mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 10.54mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 38 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Width 4.69mm | ||
Number of Elements per Chip 1 | ||
Length 10.54mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 10.54mm | ||
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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