STMicroelectronics STI28 N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK STI28N60M2

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Subtotal (1 tube of 50 units)*

£77.80

(exc. VAT)

£93.35

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50£1.556£77.80
100 - 200£1.515£75.75
250 - 450£1.476£73.80
500 +£1.439£71.95

*price indicative

RS Stock No.:
164-6960
Mfr. Part No.:
STI28N60M2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

STI28

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.6V

Minimum Operating Temperature

-55 °C

Height

9.3mm

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Extremely low gate charge
Excellent output capacitance (COSS ) profile
100% avalanche tested
Zener-protected
Extremely low Qg for increased efficiency
Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)

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