STMicroelectronics STI28 N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK STI28N60M2
- RS Stock No.:
- 164-6985
- Mfr. Part No.:
- STI28N60M2
- Brand:
- STMicroelectronics
Subtotal (1 pack of 2 units)*
£4.43
(exc. VAT)
£5.316
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 30 January 2026
Units | Per unit | Per Pack* |
---|---|---|
2 - 8 | £2.215 | £4.43 |
10 - 18 | £2.165 | £4.33 |
20 - 48 | £2.10 | £4.20 |
50 - 98 | £2.045 | £4.09 |
100 + | £2.00 | £4.00 |
*price indicative
- RS Stock No.:
- 164-6985
- Mfr. Part No.:
- STI28N60M2
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 22 A | |
Maximum Drain Source Voltage | 650 V | |
Series | STI28 | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 150 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 170 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | +25 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 36 nC @ 10 V | |
Length | 10.4mm | |
Width | 4.6mm | |
Height | 9.3mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.6V | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 650 V | ||
Series STI28 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 170 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +25 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 36 nC @ 10 V | ||
Length 10.4mm | ||
Width 4.6mm | ||
Height 9.3mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.6V | ||
Excellent output capacitance (COSS ) profile
100% avalanche tested
Zener-protected
Extremely low Qg for increased efficiency
Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)
Related links
- STMicroelectronics STI28 N-Channel MOSFET 650 V, 3-Pin D2PAK STI28N60M2
- IXYS HiperFET 22 A 3-Pin D2PAK IXFA22N65X2
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-220 IPP60R099C7XKSA1
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin TO-220 STP28N60M2
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin TO-247 STW28N60M2
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 650 V, 3-Pin TO-247 STW28N60DM2
- STMicroelectronics MDmesh M5 N-Channel MOSFET 650 V, 3-Pin TO-247 STW30N65M5
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP150N60E-GE3