STMicroelectronics STI28 N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK STI28N60M2

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Subtotal (1 pack of 2 units)*

£4.43

(exc. VAT)

£5.316

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8£2.215£4.43
10 - 18£2.165£4.33
20 - 48£2.10£4.20
50 - 98£2.045£4.09
100 +£2.00£4.00

*price indicative

Packaging Options:
RS Stock No.:
164-6985
Mfr. Part No.:
STI28N60M2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

STI28

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Width

4.6mm

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Number of Elements per Chip

1

Forward Diode Voltage

1.6V

Height

9.3mm

Minimum Operating Temperature

-55 °C

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Extremely low gate charge
Excellent output capacitance (COSS ) profile
100% avalanche tested
Zener-protected
Extremely low Qg for increased efficiency
Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)

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