Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK IRFU120NPBF

Save 20% when you buy 1875 units

Subtotal (1 tube of 75 units)*

£34.725

(exc. VAT)

£41.70

(inc. VAT)

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Units
Per unit
Per Tube*
75 - 75£0.463£34.73
150 - 300£0.44£33.00
375 - 675£0.421£31.58
750 - 1800£0.394£29.55
1875 +£0.37£27.75

*price indicative

RS Stock No.:
178-1507
Mfr. Part No.:
IRFU120NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

25 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Length

6.6mm

Maximum Operating Temperature

+175 °C

Width

2.3mm

Height

6.1mm

Minimum Operating Temperature

-55 °C

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