Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin DPAK IRFR120NTRLPBF
- RS Stock No.:
- 827-4035
- Mfr. Part No.:
- IRFR120NTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£11.96
(exc. VAT)
£14.36
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 180 left, ready to ship
- Final 360 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.598 | £11.96 |
| 200 - 480 | £0.467 | £9.34 |
| 500 - 980 | £0.437 | £8.74 |
| 1000 - 1980 | £0.407 | £8.14 |
| 2000 + | £0.377 | £7.54 |
*price indicative
- RS Stock No.:
- 827-4035
- Mfr. Part No.:
- IRFR120NTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.4 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 210 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.4 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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