Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin DPAK IRFR120NTRLPBF
- RS Stock No.:
- 827-4035
- Mfr. Part No.:
- IRFR120NTRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£4.74
(exc. VAT)
£5.68
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 180 unit(s) ready to ship
- Plus 520 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 + | £0.237 | £4.74 |
*price indicative
- RS Stock No.:
- 827-4035
- Mfr. Part No.:
- IRFR120NTRLPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.4 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 210 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.4 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR120NTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin IPAK IRFU120NPBF
- Infineon HEXFET N-Channel MOSFET 100 A DPAK IRFR120NTRPBF
- Infineon CoolMOS™ Silicon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R1K2P7SATMA1
- Diodes Inc N-Channel MOSFET 20 V, 6-Pin U-DFN2020 DMN2022UFDF-7
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR3410TRLPBF
- onsemi P-Channel MOSFET 60 V, 3-Pin DPAK FQD11P06TM
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK AUIRLR3410TRL