Infineon HEXFET N-Channel MOSFET, 8.7 A, 100 V, 3-Pin DPAK IRFR120ZTRPBF

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Subtotal (1 reel of 2000 units)*

£310.00

(exc. VAT)

£372.00

(inc. VAT)

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Per unit
Per Reel*
2000 - 2000£0.155£310.00
4000 - 4000£0.147£294.00
6000 +£0.138£276.00

*price indicative

RS Stock No.:
215-2596
Mfr. Part No.:
IRFR120ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.19 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon HEXFET® Power MOSFET series utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free

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