Infineon HEXFET N-Channel MOSFET, 8.7 A, 100 V, 3-Pin DPAK IRFR120ZTRPBF
- RS Stock No.:
- 215-2597
- Mfr. Part No.:
- IRFR120ZTRPBF
- Brand:
- Infineon
Subtotal (1 pack of 50 units)*
£14.90
(exc. VAT)
£17.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 8,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
50 + | £0.298 | £14.90 |
*price indicative
- RS Stock No.:
- 215-2597
- Mfr. Part No.:
- IRFR120ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 8.7 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.19 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.7 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.19 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon HEXFET® Power MOSFET series utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR120ZTRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR120NTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR3411TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRLR120NTRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK AUIRFR540ZTRL
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK AUIRLR3410TRL
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR3710ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR540ZTRPBF