MPN

Infineon HEXFET Type N-Channel MOSFET, 8.7 A, 100 V Enhancement, 3-Pin TO-252 IRFR120ZTRPBF

RS Stock No.:: 215-2597
Mfr. Part No.:: IRFR120ZTRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 8.7 A, 100 V Enhancement, 3-Pin TO-252 IRFR120ZTRPBF

Subtotal (1 pack of 50 units)*

£14.90

(exc. VAT)

£17.90

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 8,450 unit(s), ready to ship

Units	Per unit	Per Pack*
50 +	£0.298	£14.90

*price indicative

RS Stock No.:: 215-2597
Mfr. Part No.:: IRFR120ZTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.7A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	10nC
	Maximum Power Dissipation Pd	35W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.7A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 10nC
	Maximum Power Dissipation Pd 35W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFR120ZTRPBF

The Infineon HEXFET® Power MOSFET series utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

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