Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement TO-252

Bulk discount available

Subtotal (1 reel of 3000 units)*

£960.00

(exc. VAT)

£1,140.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 15,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 3000£0.32£960.00
6000 +£0.304£912.00

*price indicative

RS Stock No.:
218-3105
Mfr. Part No.:
IRFR3410TRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

31Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

2.39 mm

Length

6.73mm

Height

6.22mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.

RoHS Compliant

175°C Operating Temperature

Fast switching

Related links