Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement TO-252

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Subtotal (1 reel of 3000 units)*

£960.00

(exc. VAT)

£1,140.00

(inc. VAT)

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Per Reel*
3000 - 3000£0.32£960.00
6000 +£0.304£912.00

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RS Stock No.:
218-3105
Mfr. Part No.:
IRFR3410TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

31Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

56nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

6.22mm

Width

2.39 mm

Length

6.73mm

Automotive Standard

No

The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.

RoHS Compliant

175°C Operating Temperature

Fast switching

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