Infineon HEXFET Dual Silicon N-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220 Full-Pak IRFIZ44NPBF
- RS Stock No.:
- 262-6760
- Mfr. Part No.:
- IRFIZ44NPBF
- Brand:
- Infineon
Subtotal (1 tube of 2000 units)*
£940.00
(exc. VAT)
£1,120.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,998,000 unit(s) shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 2000 + | £0.47 | £940.00 |
*price indicative
- RS Stock No.:
- 262-6760
- Mfr. Part No.:
- IRFIZ44NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | TO-220 Full-Pak | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type TO-220 Full-Pak | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
High voltage isolation 2.5KVRMS
High voltage isolation 2.5KVRMS
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