Infineon HEXFET Type N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 217-2621
- Mfr. Part No.:
- IRFR3709ZTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 2000 units)*
£518.00
(exc. VAT)
£622.00
(inc. VAT)
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | £0.259 | £518.00 |
| 4000 + | £0.246 | £492.00 |
*price indicative
- RS Stock No.:
- 217-2621
- Mfr. Part No.:
- IRFR3709ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Length | 6.37mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Length 6.37mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package.
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
Related links
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