N-Channel MOSFET, 86 A, 55 V, 3-Pin D2PAK Infineon IRL3705ZSTRLPBF

RS Stock No.:: 165-8219
Mfr. Part No.:: IRL3705ZSTRLPBF
Brand:: Infineon

N-Channel MOSFET, 86 A, 55 V, 3-Pin D2PAK Infineon IRL3705ZSTRLPBF

696 In stock - FREE next working day delivery available

Price Each (On a Reel of 800)

£0.798

(exc. VAT)

£0.958

(inc. VAT)

Units	Per unit	Per Reel*
800 +	£0.798	£638.40

*price indicative

RS Stock No.:: 165-8219
Mfr. Part No.:: IRL3705ZSTRLPBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	86 A
Maximum Drain Source Voltage	55 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	12 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	11.3mm
Typical Gate Charge @ Vgs	40 nC @ 5 V
Length	10.67mm
Transistor Material	Si
Height	4.83mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V