Infineon HEXFET Dual Silicon N-Channel MOSFET, 29 A, 55 V, 3-Pin D2PAK IRFZ34NSTRLPBF

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Subtotal (1 reel of 800 units)*

£374.40

(exc. VAT)

£449.60

(inc. VAT)

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  • 800 unit(s) ready to ship
  • Plus 999,998,400 unit(s) shipping from 18 December 2025
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Units
Per unit
Per Reel*
800 - 800£0.468£374.40
1600 - 1600£0.445£356.00
2400 +£0.417£333.60

*price indicative

RS Stock No.:
262-6782
Mfr. Part No.:
IRFZ34NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

2

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

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