Infineon HEXFET N-Channel MOSFET, 210 A, 55 V, 3-Pin D2PAK IRF3805STRLPBF

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£14.88

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£17.855

(inc. VAT)

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Packaging Options:
RS Stock No.:
217-2598
Mfr. Part No.:
IRF3805STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

210 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.3 mO

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free

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