Infineon HEXFET Type N-Channel MOSFET, 94 A, 55 V Enhancement, 3-Pin TO-263 IRF1010ZSTRLPBF

RS Stock No.:: 915-4923
Mfr. Part No.:: IRF1010ZSTRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 94 A, 55 V Enhancement, 3-Pin TO-263 IRF1010ZSTRLPBF

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£12.90

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£15.50

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In Stock

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Units	Per unit	Per Pack*
10 - 40	£1.29	£12.90
50 - 90	£1.226	£12.26
100 - 240	£1.174	£11.74
250 - 490	£1.122	£11.22
500 +	£0.71	£7.10

*price indicative

RS Stock No.:: 915-4923
Mfr. Part No.:: IRF1010ZSTRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	94A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Power Dissipation Pd	140W
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Width	11.3 mm
	Standards/Approvals	No
	Height	4.83mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 94A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Power Dissipation Pd 140W
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Width 11.3 mm
	Standards/Approvals No
	Height 4.83mm
	Automotive Standard AEC-Q101

Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZSTRLPBF

This surface mount MOSFET provides exceptional performance in various applications. Created by Infineon, it leverages Advanced processing techniques to deliver low on-resistance and high current handling capabilities. Its effectiveness in high-temperature environments makes it an important component for professionals in automation, electronics, electrical, and mechanical sectors.

Features & Benefits

• High continuous drain current of 94A supports substantial load applications

• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency

• Maximum drain-source voltage of 55V enables design flexibility

• High reliability with a maximum operating temperature of 175°C

• Fast switching capabilities reduce delays in circuit response

• N-channel configuration is suitable for Advanced electronic designs

Applications

• Utilised in power management and conversion systems

• Employed in motor control circuits for automation technologies

• Suitable for power supply designs demanding high efficiency

• Integral in electric vehicle power electronics

• Used in renewable energy systems for effective energy conversion

What are the implications of the low on-resistance feature?

The low on-resistance of 7.5mΩ ensures minimal heat generation during operation, leading to increased efficiency and reduced cooling requirements.

How does this MOSFET perform in high-temperature environments?

It supports maximum operating temperatures of up to 175°C, making it suitable for harsh conditions without compromising performance.

What type of mounting is required for this component?

This device is designed for surface mount applications, allowing Compact layout and efficient thermal management on printed circuit boards.

Can it handle pulsed currents effectively?

Yes, it features a pulsed drain current rating of 360A, enabling it to manage transient conditions efficiently.

What characteristics should I consider for circuit compatibility?

Ensure that the gate threshold voltage ranges from 2V to 4V to ensure proper switching behaviour within your circuit design.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today