Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSTRLPBF

RS Stock No.:: 915-4923
Mfr. Part No.:: IRF1010ZSTRLPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSTRLPBF

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£12.90

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£15.50

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Plus 2,930 unit(s) shipping from 13 October 2025

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Units	Per unit	Per Pack*
10 - 40	£1.29	£12.90
50 - 90	£1.226	£12.26
100 - 240	£1.174	£11.74
250 - 490	£1.122	£11.22
500 +	£0.71	£7.10

*price indicative

RS Stock No.:: 915-4923
Mfr. Part No.:: IRF1010ZSTRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	94 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	7.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	140 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Length	10.67mm
	Transistor Material	Si
	Width	11.3mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 94 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 7.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 140 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Length 10.67mm
	Transistor Material Si
	Width 11.3mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C
	Height 4.83mm

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZSTRLPBF

This surface mount MOSFET provides exceptional performance in various applications. Created by Infineon, it leverages advanced processing techniques to deliver low on-resistance and high current handling capabilities. Its effectiveness in high-temperature environments makes it an important component for professionals in automation, electronics, electrical, and mechanical sectors.

Features & Benefits

• High continuous drain current of 94A supports substantial load applications
• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency
• Maximum drain-source voltage of 55V enables design flexibility
• High reliability with a maximum operating temperature of 175°C
• Fast switching capabilities reduce delays in circuit response
• N-channel configuration is suitable for advanced electronic designs

Applications

• Utilised in power management and conversion systems
• Employed in motor control circuits for automation technologies
• Suitable for power supply designs demanding high efficiency
• Integral in electric vehicle power electronics
• Used in renewable energy systems for effective energy conversion

What are the implications of the low on-resistance feature?

The low on-resistance of 7.5mΩ ensures minimal heat generation during operation, leading to increased efficiency and reduced cooling requirements.

How does this MOSFET perform in high-temperature environments?

It supports maximum operating temperatures of up to 175°C, making it suitable for harsh conditions without compromising performance.

What type of mounting is required for this component?

This device is designed for surface mount applications, allowing compact layout and efficient thermal management on printed circuit boards.

Can it handle pulsed currents effectively?

Yes, it features a pulsed drain current rating of 360A, enabling it to manage transient conditions efficiently.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.