Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSTRLPBF
- RS Stock No.:
- 165-8196
- Mfr. Part No.:
- IRF1010ZSTRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£575.20
(exc. VAT)
£690.40
(inc. VAT)
FREE delivery for orders over £50.00
- 2,400 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
800 - 800 | £0.719 | £575.20 |
1600 + | £0.683 | £546.40 |
*price indicative
- RS Stock No.:
- 165-8196
- Mfr. Part No.:
- IRF1010ZSTRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 94 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 7.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 140 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Width | 11.3mm | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 94 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Width 11.3mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
Forward Diode Voltage 1.3V | ||
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