Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin D2PAK IRLZ34NSTRLPBF
- RS Stock No.:
- 145-8936
- Mfr. Part No.:
- IRLZ34NSTRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£342.40
(exc. VAT)
£411.20
(inc. VAT)
FREE delivery for orders over £50.00
- 1,600 unit(s) shipping from 13 November 2025
Units | Per unit | Per Reel* |
---|---|---|
800 - 800 | £0.428 | £342.40 |
1600 - 1600 | £0.407 | £325.60 |
2400 + | £0.381 | £304.80 |
*price indicative
- RS Stock No.:
- 145-8936
- Mfr. Part No.:
- IRLZ34NSTRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 68 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Width | 11.3mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 25 nC @ 5 V | |
Forward Diode Voltage | 1.3V | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 11.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 25 nC @ 5 V | ||
Forward Diode Voltage 1.3V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NSTRLPBF
Features & Benefits
• Low RDS(on) for efficient power dissipation
• High thermal resistance allows operation at elevated temperatures
• Maximum power dissipation of 68 W contributes to durability
• Surface mount technology supports compact designs
• Efficient drive with capable high gate charge at 5V
Applications
• Motor control requiring swift switching
• DC-DC converters for improved efficiency
• Precision instrumentation for dependable performance
• Automotive with high reliability demands
What is the maximum continuous current this component can handle?
How does this MOSFET manage thermal performance?
Can it be used in automotive applications?
What type of circuit configurations can it support?
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