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Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin D2PAK IRLZ34NSTRLPBF

RS Stock No.:: 915-5112
Mfr. Part No.:: IRLZ34NSTRLPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin D2PAK IRLZ34NSTRLPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

£12.00

(exc. VAT)

£14.40

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

1,600 unit(s) shipping from 13 November 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	£0.60	£12.00
100 - 180	£0.57	£11.40
200 - 480	£0.546	£10.92
500 - 980	£0.522	£10.44
1000 +	£0.486	£9.72

*price indicative

RS Stock No.:: 915-5112
Mfr. Part No.:: IRLZ34NSTRLPBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NSTRLPBF

This high-performance N-channel MOSFET facilitates efficient switching and amplification in various electrical applications. With a continuous drain current capacity of 30A and a maximum drain-source voltage of 55V, it suits automotive, industrial, and consumer electronics applications. Its surface mount design simplifies integration into modern circuit boards, making it a key component for effective power management.

Features & Benefits

• Low gate threshold voltage for enhanced switching speed
• Low RDS(on) for efficient power dissipation
• High thermal resistance allows operation at elevated temperatures
• Maximum power dissipation of 68 W contributes to durability
• Surface mount technology supports compact designs
• Efficient drive with capable high gate charge at 5V

Applications

• Power supply circuits for effective voltage regulation
• Motor control requiring swift switching
• DC-DC converters for improved efficiency
• Precision instrumentation for dependable performance
• Automotive with high reliability demands

What is the maximum continuous current this component can handle?

The device can handle a maximum continuous drain current of 30A.

How does this MOSFET manage thermal performance?

It operates at a maximum temperature of +175 °C, ensuring reliability in high-temperature environments.

Can it be used in automotive applications?

Yes, its robust construction and high-temperature tolerance make it suitable for various automotive circuits.

What type of circuit configurations can it support?

The MOSFET supports enhancement mode transistor configurations, ideal for switching applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	30 A
	Maximum Drain Source Voltage	55 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	68 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Length	10.67mm
	Typical Gate Charge @ Vgs	25 nC @ 5 V
	Maximum Operating Temperature	+175 °C
	Width	11.3mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Height	4.83mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 30 A
	Maximum Drain Source Voltage 55 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 68 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Length 10.67mm
	Typical Gate Charge @ Vgs 25 nC @ 5 V
	Maximum Operating Temperature +175 °C
	Width 11.3mm
	Transistor Material Si
	Number of Elements per Chip 1
	Height 4.83mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

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