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Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin TO-220AB IRLZ34NPBF

RS Stock No.:: 919-4898
Mfr. Part No.:: IRLZ34NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin TO-220AB IRLZ34NPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£43.35

(exc. VAT)

£52.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

750 unit(s) ready to ship
Plus 250 unit(s) ready to ship from another location
Plus 400 unit(s) shipping from 11 September 2025

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Units	Per unit	Per Tube*
50 - 50	£0.867	£43.35
100 - 200	£0.676	£33.80
250 - 450	£0.633	£31.65
500 - 1200	£0.589	£29.45
1250 +	£0.546	£27.30

*price indicative

RS Stock No.:: 919-4898
Mfr. Part No.:: IRLZ34NPBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF

This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.

Features & Benefits

• Low on-resistance of 35mΩ reduces power loss
• High power dissipation capability of 68W enhances performance
• Operating temperature range from -55°C to +175°C ensures versatility
• Typical gate charge of 25nC at 5V enables faster switching
• Compact TO-220AB package enables efficient PCB layout

Applications

• Utilised in DC-DC converters for efficient power conversion
• Appropriate for motor driver circuits in industrial automation
• Effective in power management systems for renewable energy
• Used in high-speed switching for telecommunications

What is the maximum gate-source voltage?

The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.

How does temperature affect its performance?

The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.

Can it be used in high-frequency applications?

Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.

What are the implications of low Rds(on)?

A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	30 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	35 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	68 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	25 nC @ 5 V
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 30 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 35 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 68 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 25 nC @ 5 V
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 8.77mm

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