Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IRFR4105ZTRPBF
- RS Stock No.:
- 827-4066
- Mfr. Part No.:
- IRFR4105ZTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£14.42
(exc. VAT)
£17.30
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.721 | £14.42 |
| 100 - 180 | £0.685 | £13.70 |
| 200 - 480 | £0.656 | £13.12 |
| 500 - 980 | £0.613 | £12.26 |
| 1000 + | £0.577 | £11.54 |
*price indicative
- RS Stock No.:
- 827-4066
- Mfr. Part No.:
- IRFR4105ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 24.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 24.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220AB IRLZ34NPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin D2PAK IRLZ34NSTRLPBF
- Infineon OptiMOS™ Silicon N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S215ATMA2
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S2L13ATMA4
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S223ATMA2
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2705TRPBF