Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin TO-220AB IRLZ34NPBF

Save 25% when you buy 250 units

Subtotal (1 unit)*

£1.05

(exc. VAT)

£1.26

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 249 unit(s) ready to ship from another location
  • Plus 400 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£1.05
10 - 49£0.94
50 - 99£0.89
100 - 249£0.81
250 +£0.78

*price indicative

RS Stock No.:
541-1247
Distrelec Article No.:
303-41-411
Mfr. Part No.:
IRLZ34NPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Length

10.54mm

Width

4.69mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

25 nC @ 5 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

8.77mm

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF


This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.

Features & Benefits


• Low on-resistance of 35mΩ reduces power loss
• High power dissipation capability of 68W enhances performance
• Operating temperature range from -55°C to +175°C ensures versatility
• Typical gate charge of 25nC at 5V enables faster switching
• Compact TO-220AB package enables efficient PCB layout

Applications


• Utilised in DC-DC converters for efficient power conversion
• Appropriate for motor driver circuits in industrial automation
• Effective in power management systems for renewable energy
• Used in high-speed switching for telecommunications

What is the maximum gate-source voltage?


The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.

How does temperature affect its performance?


The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.

Can it be used in high-frequency applications?


Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.

What are the implications of low Rds(on)?


A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links