Infineon HEXFET N-Channel MOSFET, 59 A, 55 V, 3-Pin DPAK IRFR2905ZTRPBF
- RS Stock No.:
- 217-2619
- Mfr. Part No.:
- IRFR2905ZTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 2000 units)*
£804.00
(exc. VAT)
£964.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,998,000 unit(s) shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2000 - 2000 | £0.402 | £804.00 |
4000 + | £0.382 | £764.00 |
*price indicative
- RS Stock No.:
- 217-2619
- Mfr. Part No.:
- IRFR2905ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 59 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 14.5 mO | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 59 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14.5 mO | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead Free
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead Free
Related links
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR2905ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK AUIRFR2905ZTRL
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRF3710ZPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2705TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905TRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZTRPBF