Infineon HEXFET N-Channel MOSFET, 59 A, 55 V, 3-Pin DPAK IRFR2905ZTRPBF

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Subtotal (1 reel of 2000 units)*

£804.00

(exc. VAT)

£964.00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000£0.402£804.00
4000 +£0.382£764.00

*price indicative

RS Stock No.:
217-2619
Mfr. Part No.:
IRFR2905ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14.5 mO

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead Free

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