MPN

Infineon HEXFET N-Channel MOSFET, 59 A, 100 V, 3-Pin TO-220AB IRF3710ZPBF

RS Stock No.:: 688-6850
Mfr. Part No.:: IRF3710ZPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 59 A, 100 V, 3-Pin TO-220AB IRF3710ZPBF

Bulk discount available

Subtotal (1 pack of 2 units)*

£2.14

(exc. VAT)

£2.56

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

48 unit(s) ready to ship
Plus 38 unit(s) ready to ship from another location
Plus 1,004 unit(s) shipping from 12 November 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£1.07	£2.14
20 - 48	£0.965	£1.93
50 - 98	£0.91	£1.82
100 - 198	£0.845	£1.69
200 +	£0.78	£1.56

*price indicative

RS Stock No.:: 688-6850
Mfr. Part No.:: IRF3710ZPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	59 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	18 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	160 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.69mm
	Typical Gate Charge @ Vgs	82 nC @ 10 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Length	10.54mm
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 59 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 18 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 160 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.69mm
	Typical Gate Charge @ Vgs 82 nC @ 10 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Length 10.54mm
	Height 8.77mm
	Minimum Operating Temperature -55 °C

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