Infineon HEXFET N-Channel MOSFET, 59 A, 100 V, 3-Pin TO-220AB IRF3710ZPBF
- RS Stock No.:
- 688-6850
- Mfr. Part No.:
- IRF3710ZPBF
- Brand:
- Infineon
Save 27% when you buy 200 units
Subtotal (1 pack of 2 units)*
£2.14
(exc. VAT)
£2.56
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 60 unit(s) ready to ship
- Plus 40 unit(s) ready to ship from another location
- Plus 1,004 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.07 | £2.14 |
| 20 - 48 | £0.965 | £1.93 |
| 50 - 98 | £0.91 | £1.82 |
| 100 - 198 | £0.845 | £1.69 |
| 200 + | £0.78 | £1.56 |
*price indicative
- RS Stock No.:
- 688-6850
- Mfr. Part No.:
- IRF3710ZPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 59 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 18 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 82 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.69mm | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 59 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 18 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 82 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.69mm | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
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