Infineon HEXFET Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 688-6850
- Mfr. Part No.:
- IRF3710ZPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.14
(exc. VAT)
£2.56
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20 unit(s) ready to ship
- Plus 38 unit(s) ready to ship from another location
- Plus 1,004 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.07 | £2.14 |
| 20 - 48 | £0.965 | £1.93 |
| 50 - 98 | £0.91 | £1.82 |
| 100 - 198 | £0.845 | £1.69 |
| 200 + | £0.78 | £1.56 |
*price indicative
- RS Stock No.:
- 688-6850
- Mfr. Part No.:
- IRF3710ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 160W | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Width | 4.69 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 160W | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 8.77mm | ||
Width 4.69 mm | ||
Automotive Standard No | ||
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRF3710ZPBF
- Infineon N-Channel MOSFET 100 V PG-TO252-3 IPD122N10N3GATMA1
- Infineon IRF3710ZS N-Channel MOSFET 100 V, 3-Pin D2PAK IRF3710ZSTRLPBF
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 ISC0804NLSATMA1
- Diodes Inc N-Channel MOSFET 100 V, 3-Pin DPAK DMTH10H015SK3-13
- Vishay Silicon N-Channel MOSFET 100 V, 7-Pin SO-8L SIJ4106DP-T1-GE3
- ROHM AG096F N-Channel MOSFET 100 V, 3-Pin TO 252 AG096FPD3HRBTL
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR2905ZTRPBF


