MPN

Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF

RS Stock No.:: 217-2620
Mfr. Part No.:: IRFR2905ZTRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF

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Subtotal (1 pack of 20 units)*

£17.26

(exc. VAT)

£20.72

(inc. VAT)

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In Stock

1,580 unit(s) ready to ship

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Units	Per unit	Per Pack*
20 - 80	£0.863	£17.26
100 - 180	£0.82	£16.40
200 - 480	£0.786	£15.72
500 - 980	£0.751	£15.02
1000 +	£0.698	£13.96

*price indicative

RS Stock No.:: 217-2620
Mfr. Part No.:: IRFR2905ZTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	14.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	29nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	2.39mm
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22 mm
	Distrelec Product Id	304-39-420
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 14.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 29nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 2.39mm
	Length 6.73mm
	Standards/Approvals No
	Width 6.22 mm
	Distrelec Product Id 304-39-420
	Automotive Standard No

Datasheet - IRFR2905ZTRPBF

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

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