Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF
- RS Stock No.:
- 217-2620
- Distrelec Article No.:
- 304-39-420
- Mfr. Part No.:
- IRFR2905ZTRPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
£13.90
(exc. VAT)
£16.68
(inc. VAT)
FREE delivery for orders over £60.00
Last RS stock
- Final 1,540 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.695 | £13.90 |
| 100 - 180 | £0.661 | £13.22 |
| 200 - 480 | £0.632 | £12.64 |
| 500 - 980 | £0.605 | £12.10 |
| 1000 + | £0.562 | £11.24 |
*price indicative
- RS Stock No.:
- 217-2620
- Distrelec Article No.:
- 304-39-420
- Mfr. Part No.:
- IRFR2905ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead Free
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF3710ZPBF
- Infineon AUIRFS Type N-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon AUIRFS Type N-Channel MOSFET 55 V, 3-Pin TO-252 AUIRFR2905ZTRL
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252