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Infineon HEXFET N-Channel MOSFET, 25 A, 55 V, 3-Pin DPAK IRLR3105TRPBF

RS Stock No.:: 165-5922
Mfr. Part No.:: IRLR3105TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 25 A, 55 V, 3-Pin DPAK IRLR3105TRPBF

Bulk discount available

Subtotal (1 reel of 2000 units)*

£758.00

(exc. VAT)

£910.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,000 unit(s) ready to ship

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Units	Per unit	Per Reel*
2000 - 2000	£0.379	£758.00
4000 +	£0.36	£720.00

*price indicative

RS Stock No.:: 165-5922
Mfr. Part No.:: IRLR3105TRPBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 25A Maximum Continuous Drain Current, 57W Maximum Power Dissipation - IRLR3105TRPBF

This MOSFET is intended for high-performance applications where electrical power control is critical. It provides efficient switching and effective thermal management, functioning within a wide temperature range, thus making it an advantageous choice for professionals in automation, electronics, and electrical sectors.

Features & Benefits

• Improves efficiency with low Rds(on) for reduced power loss
• Supports a maximum continuous drain current of 25A
• Allows dual gate-source voltage levels for added flexibility
• Maintains thermal stability with a maximum operating temperature of +175°C
• Compact DPAK TO-252 package ensures straightforward surface mounting
• Designed for rapid switching speeds for enhanced performance

Applications

• Controls motor drives in automation systems
• Utilised in power management circuits for energy efficiency
• Integrated into DC-DC converters for electronic devices
• Suitable for industrial equipment demanding high reliability
• Employed in battery management systems for optimal operation

What is the operating temperature range?

The operating temperature range is -55°C to +175°C, offering versatility across various environments.

How does it handle switching speed?

It is built for fast switching, ensuring high performance in applications necessitating quick on-off cycles.

What type of mounting does it support?

This device is designed for surface mount applications using vapour phase, infrared, or wave soldering techniques.

Can it be used in high-voltage applications?

Yes, it operates with a maximum drain-source voltage of 55V, making it apt for high-voltage circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	25 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	43 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	57 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Typical Gate Charge @ Vgs	20 nC @ 5 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Length	6.73mm
	Width	6.22mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 25 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 43 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 57 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Typical Gate Charge @ Vgs 20 nC @ 5 V
	Transistor Material Si
	Number of Elements per Chip 1
	Length 6.73mm
	Width 6.22mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 2.39mm

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