Infineon HEXFET N-Channel MOSFET, 25 A, 55 V, 3-Pin DPAK IRLR3105TRPBF

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Packaging Options:
RS Stock No.:
830-3360
Mfr. Part No.:
IRLR3105TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

43 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

20 nC @ 5 V

Length

6.73mm

Number of Elements per Chip

1

Transistor Material

Si

Width

6.22mm

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.3V

Height

2.39mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 25A Maximum Continuous Drain Current, 57W Maximum Power Dissipation - IRLR3105TRPBF


This MOSFET is intended for high-performance applications where electrical power control is critical. It provides efficient switching and effective thermal management, functioning within a wide temperature range, thus making it an advantageous choice for professionals in automation, electronics, and electrical sectors.

Features & Benefits


• Improves efficiency with low Rds(on) for reduced power loss
• Supports a maximum continuous drain current of 25A
• Allows dual gate-source voltage levels for added flexibility
• Maintains thermal stability with a maximum operating temperature of +175°C
• Compact DPAK TO-252 package ensures straightforward surface mounting
• Designed for rapid switching speeds for enhanced performance

Applications


• Controls motor drives in automation systems
• Utilised in power management circuits for energy efficiency
• Integrated into DC-DC converters for electronic devices
• Suitable for industrial equipment demanding high reliability
• Employed in battery management systems for optimal operation

What is the operating temperature range?


The operating temperature range is -55°C to +175°C, offering versatility across various environments.

How does it handle switching speed?


It is built for fast switching, ensuring high performance in applications necessitating quick on-off cycles.

What type of mounting does it support?


This device is designed for surface mount applications using vapour phase, infrared, or wave soldering techniques.

Can it be used in high-voltage applications?


Yes, it operates with a maximum drain-source voltage of 55V, making it apt for high-voltage circuits.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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