Infineon HEXFET N-Channel MOSFET, 25 A, 200 V, 3-Pin TO-220AB IRFB5620PBF

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Subtotal (1 tube of 50 units)*

£43.15

(exc. VAT)

£51.80

(inc. VAT)

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  • 1,750 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50£0.863£43.15
100 - 200£0.699£34.95
250 - 450£0.656£32.80
500 - 950£0.613£30.65
1000 +£0.572£28.60

*price indicative

RS Stock No.:
124-9009
Mfr. Part No.:
IRFB5620PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

73 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

14 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4.83mm

Minimum Operating Temperature

-55 °C

Height

9.02mm

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