Infineon HEXFET Dual Silicon N-Channel MOSFET, 26 A, 200 V, 3-Pin TO-220 Full-Pak IRFI4227PBF

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

£5.58

(exc. VAT)

£6.70

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,944 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18£2.79£5.58
20 - 48£2.535£5.07
50 - 98£2.37£4.74
100 - 198£2.205£4.41
200 +£2.035£4.07

*price indicative

Packaging Options:
RS Stock No.:
262-6757
Mfr. Part No.:
IRFI4227PBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TO-220 Full-Pak

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

2

The Infineon power MOSFET is specifically designed for sustain energy recovery and pass switch applications in plasma display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.

150 degree Celsius operating junction temperature
High repetitive peak current capability

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links