Infineon HEXFET Dual Silicon N-Channel MOSFET, 26 A, 200 V, 3-Pin TO-220 Full-Pak IRFI4227PBF

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Subtotal (1 tube of 2000 units)*

£1,936.00

(exc. VAT)

£2,324.00

(inc. VAT)

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Units
Per unit
Per Tube*
2000 +£0.968£1,936.00

*price indicative

RS Stock No.:
262-6756
Mfr. Part No.:
IRFI4227PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220 Full-Pak

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

Silicon

The Infineon power MOSFET is specifically designed for sustain energy recovery and pass switch applications in plasma display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.

150 degree Celsius operating junction temperature
High repetitive peak current capability

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