Infineon HEXFET Type N-Channel MOSFET, 26 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 2000 units)*

£1,936.00

(exc. VAT)

£2,324.00

(inc. VAT)

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Units
Per unit
Per Tube*
2000 +£0.968£1,936.00

*price indicative

RS Stock No.:
262-6756
Mfr. Part No.:
IRFI4227PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.036Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET is specifically designed for sustain energy recovery and pass switch applications in plasma display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.

150 degree Celsius operating junction temperature

High repetitive peak current capability

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